PXP3R7-12QUJ
PXP3R7-12QUJ
  • image of PXP3R7-12QUJ
  • image of PXP3R7-12QUJ

PXP3R7-12QUJ

Category:
-
Manufacturer:
Description:
PXP3R7-12QU/SOT8002/MLPAK33
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.8

Request a Quote

Stock 2595

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Vgs (Max)
±8V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 4.5 V
Drain to Source Voltage (Vdss)
12 V
Vgs(th) (Max) @ Id
900mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package / Case
8-PowerVDFN
Supplier Device Package
MLPAK33
Power Dissipation (Max)
1.8W (Ta), 50W (Tc)
Current - Continuous Drain (Id) @ 25°C
18.7A (Ta), 98.6A (Tc)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 18.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 6 V