R6530ENXC7G
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R6530ENXC7G

Category:
-
Manufacturer:
Description:
650V 30A TO-220FM, LOW-NOISE POW
Package:
Packaging:
Tube
RoHS：
YES
Price:
$4.28

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Package / Case
TO-220-3 Full Pack
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Power Dissipation (Max)
86W (Tc)
Supplier Device Package
TO-220FM
Rds On (Max) @ Id, Vgs
140mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4V @ 960µA