RD3P100SNTL1
RD3P100SNTL1
  • image of RD3P100SNTL1
  • image of RD3P100SNTL1

RD3P100SNTL1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 100V 10A TO252
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.66

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
Power Dissipation (Max)
20W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Supplier Device Package
TO-252
Rds On (Max) @ Id, Vgs
133mOhm @ 5A, 10V