RFD4N06LSM9A
RFD4N06LSM9A
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  • image of RFD4N06LSM9A

RFD4N06LSM9A

Category:
-
Manufacturer:
Description:
MOSFET N-CH 60V 4A TO252AA
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drain to Source Voltage (Vdss)
60 V
Vgs (Max)
±10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
5V
Power Dissipation (Max)
30W (Tc)
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Supplier Device Package
TO-252AA
Rds On (Max) @ Id, Vgs
600mOhm @ 1A, 5V