RW1A025APT2CR
RW1A025APT2CR
  • image of RW1A025APT2CR
  • image of RW1A025APT2CR

RW1A025APT2CR

Category:
-
Manufacturer:
Description:
MOSFET P-CH 12V 2.5A WEMT6
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
FET Type
P-Channel
Operating Temperature
150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Power Dissipation (Max)
400mW (Ta)
Package / Case
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Drain to Source Voltage (Vdss)
12 V
Vgs (Max)
-8V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Supplier Device Package
6-WEMT
Rds On (Max) @ Id, Vgs
62mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 6 V