S3M0025120B
S3M0025120B
  • image of S3M0025120B
  • image of S3M0025120B

S3M0025120B

Category:
-
Manufacturer:
-
Description:
MOSFETS SILICON CARBIDES 1200V 2
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$13.83

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Vgs(th) (Max) @ Id
4V @ 20mA
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Power Dissipation (Max)
394W (Tc)
Vgs (Max)
+18V, -4V
Rds On (Max) @ Id, Vgs
32mOhm @ 48A, 18V
Gate Charge (Qg) (Max) @ Vgs
175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3519 pF @ 1000 V