SCTW60N120G2
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SCTW60N120G2

Category:
-
Manufacturer:
Description:
DISCRETE
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$20.38

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 200°C (TJ)
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5V @ 1mA
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
HiP247™
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 18V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
Vgs (Max)
+18V, -5V
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 8 V
Power Dissipation (Max)
389W (Tc)