SI2303BDS-T1-E3
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SI2303BDS-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET P-CH 30V 1.49A SOT23-3
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
FET Type
P-Channel
Power Dissipation (Max)
700mW (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
1.49A (Ta)
Rds On (Max) @ Id, Vgs
200mOhm @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 15 V