SI2318CDS-T1-BE3
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SI2318CDS-T1-BE3

Category:
-
Manufacturer:
Description:
N-CHANNEL 40-V (D-S) MOSFET
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$0.51

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)
40 V
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Power Dissipation (Max)
1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs
42mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta), 5.6A (Tc)