SI4463DY
  • image of SI4463DY

SI4463DY

Category:
-
Manufacturer:
Description:
P-CHANNEL MOSFET
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$1.02

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC
FET Type
P-Channel
Power Dissipation (Max)
1W (Ta)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Drain to Source Voltage (Vdss)
20 V
Vgs (Max)
±12V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
4481 pF @ 10 V
Rds On (Max) @ Id, Vgs
12mOhm @ 11.5A, 4.5V