SI4490DY-T1-E3
  • image of SI4490DY-T1-E3

SI4490DY-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 200V 2.85A 8SO
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.95

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Power Dissipation (Max)
1.56W (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Current - Continuous Drain (Id) @ 25°C
2.85A (Ta)
Rds On (Max) @ Id, Vgs
80mOhm @ 4A, 10V