SI6459BDQ-T1-E3
  • image of SI6459BDQ-T1-E3

SI6459BDQ-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET P-CH 60V 2.2A 8TSSOP
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Power Dissipation (Max)
1W (Ta)
Drain to Source Voltage (Vdss)
60 V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Rds On (Max) @ Id, Vgs
115mOhm @ 2.7A, 10V