SI7818DN-T1-E3
  • image of SI7818DN-T1-E3

SI7818DN-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 150V 2.2A PPAK1212-8
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.42

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Power Dissipation (Max)
1.5W (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs
135mOhm @ 3.4A, 10V