SIDR610DP-T1-GE3
SIDR610DP-T1-GE3
  • image of SIDR610DP-T1-GE3
  • image of SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 200V 8.9A/39.6A PPAK
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.5

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Package / Case
PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
31.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 100 V
Supplier Device Package
PowerPAK® SO-8DC
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta), 39.6A (Tc)