SIHB18N60E-GE3
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SIHB18N60E-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 600V 18A TO263
Package:
Packaging:
Tube
RoHS：
YES
Price:
$1.67

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Power Dissipation (Max)
179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 100 V
Rds On (Max) @ Id, Vgs
202mOhm @ 9A, 10V