SIHF9Z24STRR-GE3
SIHF9Z24STRR-GE3
  • image of SIHF9Z24STRR-GE3
  • image of SIHF9Z24STRR-GE3

SIHF9Z24STRR-GE3

Category:
-
Manufacturer:
Description:
MOSFET P-CHANNEL 60V
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.77

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)
3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs
280mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 25 V