SIHP23N60E-BE3
  • image of SIHP23N60E-BE3

SIHP23N60E-BE3

Category:
-
Manufacturer:
Description:
N-CHANNEL 600V
Package:
Packaging:
Tube
RoHS：
YES
Price:
$4.07

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±30V
Power Dissipation (Max)
227W (Tc)
Rds On (Max) @ Id, Vgs
158mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2418 pF @ 100 V