SIR170DP-T1-RE3
  • image of SIR170DP-T1-RE3

SIR170DP-T1-RE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 100V 23.2A/95A PPAK
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.4

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Current - Continuous Drain (Id) @ 25°C
23.2A (Ta), 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
6195 pF @ 50 V