SIR4409DP-T1-RE3
  • image of SIR4409DP-T1-RE3

SIR4409DP-T1-RE3

Category:
-
Manufacturer:
Description:
P-CHANNEL 40 V (D-S) MOSFET POWE
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.06

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
40 V
Rds On (Max) @ Id, Vgs
9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5670 pF @ 20 V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Power Dissipation (Max)
4.8W (Ta), 59.5W (Tc)
Current - Continuous Drain (Id) @ 25°C
17.2A (Ta), 60.6A (Tc)