SISS28DN-T1-GE3
  • image of SISS28DN-T1-GE3

SISS28DN-T1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 25V 60A PPAK1212-8S
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.58

Request a Quote

Stock 7580

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
57W (Tc)
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drain to Source Voltage (Vdss)
25 V
Vgs (Max)
+20V, -16V
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs
1.52mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds
3640 pF @ 10 V