SISS98DN-T1-GE3
  • image of SISS98DN-T1-GE3

SISS98DN-T1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 200V 14.1A PPAK
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.45

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
57W (Tc)
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Current - Continuous Drain (Id) @ 25°C
14.1A (Tc)
Rds On (Max) @ Id, Vgs
105mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds
608 pF @ 100 V