SPI20N60C3HKSA1
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SPI20N60C3HKSA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 600V 20.7A TO262-3
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 25 V
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Power Dissipation (Max)
208W (Tc)
Current - Continuous Drain (Id) @ 25°C
20.7A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 1mA
Supplier Device Package
PG-TO262-3-1