TPN1200APL,L1Q
  • image of TPN1200APL,L1Q

TPN1200APL,L1Q

Category:
-
Manufacturer:
Description:
PB-F POWER MOSFET TRANSISTOR TSO
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.36

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Package / Case
8-PowerVDFN
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 10V
Operating Temperature
175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id
2.5V @ 300µA
Power Dissipation (Max)
630mW (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1855 pF @ 50 V