TSM60N1R4CH C5G
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TSM60N1R4CH C5G

Category:
-
Manufacturer:
Description:
MOSFET N-CH 600V 3.3A TO251
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Drain to Source Voltage (Vdss)
600 V
Vgs (Max)
±30V
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Power Dissipation (Max)
38W (Tc)
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 10V
Supplier Device Package
TO-251 (IPAK)
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 100 V