BSB008NE2LXXUMA1
  • image of BSB008NE2LXXUMA1

BSB008NE2LXXUMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 25V 46A/180A 2WDSON
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-40°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
25 V
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Current - Continuous Drain (Id) @ 25°C
46A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs
0.8mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs
343 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 12 V