DMT35M4LFVW-7
DMT35M4LFVW-7
  • image of DMT35M4LFVW-7
  • image of DMT35M4LFVW-7

DMT35M4LFVW-7

Category:
-
Manufacturer:
Description:
MOSFET BVDSS: 25V~30V POWERDI333
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$0.94

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Specifications
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
1.5W (Ta)
Package / Case
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs
16.1 nC @ 10 V
Rds On (Max) @ Id, Vgs
6mOhm @ 20A, 10V
Mounting Type
Surface Mount, Wettable Flank
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 60A (Tc)
Supplier Device Package
PowerDI3333-8 (SWP) Type UX
Input Capacitance (Ciss) (Max) @ Vds
982 pF @ 15 V