FDC640P-NBAD004A
  • image of FDC640P-NBAD004A

FDC640P-NBAD004A

Category:
-
Manufacturer:
Description:
P-CHANNEL POWERTRENCH MOSFET, 2.
Package:
Packaging:
Bulk
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Discontinued at
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Vgs(th) (Max) @ Id
1.5V @ 250µA
Drain to Source Voltage (Vdss)
20 V
Vgs (Max)
±12V
Supplier Device Package
SuperSOT™-6
Package / Case
SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V
Power Dissipation (Max)
800mW (Ta)
Rds On (Max) @ Id, Vgs
53mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 10 V