FDP3672
  • image of FDP3672

FDP3672

Category:
-
Manufacturer:
Description:
POWER FIELD-EFFECT TRANSISTOR, 5
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$1.22

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Power Dissipation (Max)
135W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 25 V
Drain to Source Voltage (Vdss)
105 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs
33mOhm @ 41A, 10V