FQI12N60TU
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FQI12N60TU

Category:
-
Manufacturer:
Description:
MOSFET N-CH 600V 10.5A I2PAK
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
Vgs (Max)
±30V
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)
Supplier Device Package
TO-262 (I2PAK)
Rds On (Max) @ Id, Vgs
700mOhm @ 5.3A, 10V