GCMS020B120S1-E1
GCMS020B120S1-E1
  • image of GCMS020B120S1-E1
  • image of GCMS020B120S1-E1

GCMS020B120S1-E1

Category:
-
Manufacturer:
-
Description:
SIC 1200V 20M MOSFET & 50A SBD S
Package:
Packaging:
Tube
RoHS：
YES
Price:
$41.8

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Specifications
Part Status
Active
Mounting Type
Chassis Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
395W (Tc)
Vgs(th) (Max) @ Id
4V @ 20mA
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Current - Continuous Drain (Id) @ 25°C
113A (Tc)
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 20 V
Rds On (Max) @ Id, Vgs
28mOhm @ 50A, 20V
Input Capacitance (Ciss) (Max) @ Vds
5279 pF @ 1000 V