HAT2165HWS-E
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HAT2165HWS-E

Category:
-
Manufacturer:
Description:
MOSFET N-CH 30V 55A 5LFPAK
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
150°C
Vgs(th) (Max) @ Id
2.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
30W (Tc)
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 4.5 V
Supplier Device Package
LFPAK
Package / Case
SC-100, SOT-669
Current - Continuous Drain (Id) @ 25°C
55A (Ta)
Rds On (Max) @ Id, Vgs
3.3mOhm @ 27.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
5180 pF @ 10 V