IAUCN08S7N019TATMA1
IAUCN08S7N019TATMA1
  • image of IAUCN08S7N019TATMA1
  • image of IAUCN08S7N019TATMA1

IAUCN08S7N019TATMA1

Category:
-
Manufacturer:
Description:
MOSFET_(75V 120V(
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.6

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Power Dissipation (Max)
180W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Drain to Source Voltage (Vdss)
80 V
Package / Case
10-LSOP (0.209", 5.30mm Width) Exposed Pad
Supplier Device Package
PG-LHDSO-10-2
Current - Continuous Drain (Id) @ 25°C
175A (Tj)
Rds On (Max) @ Id, Vgs
1.94mOhm @ 88A, 10V
Vgs(th) (Max) @ Id
3.2V @ 93.4µA
Input Capacitance (Ciss) (Max) @ Vds
6061 pF @ 40 V