IMZA120R022M2HXKSA1
  • image of IMZA120R022M2HXKSA1

IMZA120R022M2HXKSA1

Category:
-
Manufacturer:
Description:
IMZA120R022M2HXKSA1
Package:
Packaging:
Tube
RoHS：
YES
Price:
$17.62

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Power Dissipation (Max)
329W (Tc)
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Supplier Device Package
PG-TO247-4-8
Vgs(th) (Max) @ Id
5.1V @ 10.1mA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 800 V
Rds On (Max) @ Id, Vgs
29mOhm @ 32A, 18V