IPB80P04P4L04ATMA2
  • image of IPB80P04P4L04ATMA2

IPB80P04P4L04ATMA2

Category:
-
Manufacturer:
Description:
MOSFET P-CH 40V 80A TO263-3
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.43

Request a Quote

Stock 2239

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
FET Type
P-Channel
Power Dissipation (Max)
125W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drain to Source Voltage (Vdss)
40 V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Supplier Device Package
PG-TO263-3-2
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs
176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11570 pF @ 25 V
Vgs (Max)
+5V, -16V