IPD35N12S3L24ATMA1
IPD35N12S3L24ATMA1
  • image of IPD35N12S3L24ATMA1
  • image of IPD35N12S3L24ATMA1

IPD35N12S3L24ATMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 120V 35A TO252-3
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.67

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Supplier Device Package
PG-TO252-3
Drain to Source Voltage (Vdss)
120 V
Power Dissipation (Max)
71W (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.4V @ 39µA