IPF024N10NF2SATMA1
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IPF024N10NF2SATMA1

Category:
-
Manufacturer:
Description:
TRENCH >=100V
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.68

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Power Dissipation (Max)
250W (Tc)
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 10 V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 169µA
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 50 V
Supplier Device Package
PG-TO263-7-14
Current - Continuous Drain (Id) @ 25°C
227A (Tc)