IPP65R125C7XKSA1
  • image of IPP65R125C7XKSA1

IPP65R125C7XKSA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 18A TO220-3
Package:
Packaging:
Tube
RoHS：
YES
Price:
$4.65

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO220-3
Vgs(th) (Max) @ Id
4V @ 440µA
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 400 V
Rds On (Max) @ Id, Vgs
125mOhm @ 8.9A, 10V
Power Dissipation (Max)
101W (Tc)