IPWS65R050CFD7AXKSA1
  • image of IPWS65R050CFD7AXKSA1

IPWS65R050CFD7AXKSA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 45A TO247-3-41
Package:
Packaging:
Tube
RoHS：
YES
Price:
$10.3

Request a Quote

Stock 1655

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-247-3
Operating Temperature
-40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Power Dissipation (Max)
227W (Tc)
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Supplier Device Package
PG-TO247-3-41
Rds On (Max) @ Id, Vgs
50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V