IXTA1N100P-TRL
IXTA1N100P-TRL
  • image of IXTA1N100P-TRL
  • image of IXTA1N100P-TRL

IXTA1N100P-TRL

Category:
-
Manufacturer:
Description:
MOSFET N-CH 1000V 1A TO263
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES
Price:
$1.3

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
50W (Tc)
Drain to Source Voltage (Vdss)
1000 V
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4.5V @ 50µA
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 10 V
Rds On (Max) @ Id, Vgs
15Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds
331 pF @ 25 V