NC1M120C35HTNG
  • image of NC1M120C35HTNG

NC1M120C35HTNG

Category:
-
Manufacturer:
-
Description:
SIC MOSFET 1200V 35M 75A TO247-
Package:
Packaging:
Tube
RoHS：
YES
Price:
$27.76

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1.2 kV
Vgs (Max)
+18V, -5V
Rds On (Max) @ Id, Vgs
50mOhm @ 33.3A, 18V
Vgs(th) (Max) @ Id
4.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2834 pF @ 1 kV
Power Dissipation (Max)
386W (Ta)