NTCR013N120M3S
  • image of NTCR013N120M3S

NTCR013N120M3S

Category:
-
Manufacturer:
Description:
WAFER DIE
Package:
Packaging:
Tray
RoHS：
YES
Price:
$33.36

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Current - Continuous Drain (Id) @ 25°C
-
Package / Case
Die
Supplier Device Package
Die
Drain to Source Voltage (Vdss)
1200 V
Vgs (Max)
-
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
20mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4.4V @ 37mA
Gate Charge (Qg) (Max) @ Vgs
254 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
5813 pF @ 800 V