PHB11N06LT,118
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PHB11N06LT,118

Category:
-
Manufacturer:
Description:
MOSFET N-CH 55V 10.3A D2PAK
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
Drain to Source Voltage (Vdss)
55 V
Supplier Device Package
D2PAK
Vgs (Max)
±15V
Power Dissipation (Max)
33W (Tc)
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Rds On (Max) @ Id, Vgs
130mOhm @ 5.5A, 10V