PJMF080N65FR2_T0_00601
  • image of PJMF080N65FR2_T0_00601

PJMF080N65FR2_T0_00601

Category:
-
Manufacturer:
-
Description:
650V/ 75M / FAST RECOVERY QRR/T
Package:
Packaging:
Tube
RoHS：
YES
Price:
$6.02

Request a Quote

Stock 3600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3 Full Pack, Isolated Tab
Vgs (Max)
±30V
Power Dissipation (Max)
156W (Tc)
Rds On (Max) @ Id, Vgs
75mOhm @ 17A, 10V
Drain to Source Voltage (Vdss)
700 V
Vgs(th) (Max) @ Id
4.7V @ 250µA
Supplier Device Package
ITO-220AB-F
Gate Charge (Qg) (Max) @ Vgs
78.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3507 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C
29.2A (Tc)