RQ1C065UNTR
RQ1C065UNTR
  • image of RQ1C065UNTR
  • image of RQ1C065UNTR

RQ1C065UNTR

Category:
-
Manufacturer:
Description:
MOSFET N-CH 20V 6.5A TSMT8
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$0.89

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
150°C (TJ)
Vgs (Max)
±10V
Power Dissipation (Max)
700mW (Ta)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 10 V
Package / Case
8-SMD, Flat Leads
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Rds On (Max) @ Id, Vgs
22mOhm @ 6.5A, 4.5V
Supplier Device Package
TSMT8