RQ3E100MNTB1
RQ3E100MNTB1
  • image of RQ3E100MNTB1
  • image of RQ3E100MNTB1

RQ3E100MNTB1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 30V 10A HSMT8
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES
Price:
$0.52

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Specifications
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Part Status
Not For New Designs
Operating Temperature
150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 1mA
Power Dissipation (Max)
2W (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Package / Case
8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 15 V
Supplier Device Package
8-HSMT (3.2x3)
Rds On (Max) @ Id, Vgs
12.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs
9.9 nC @ 10 V