S3M0030120K
  • image of S3M0030120K

S3M0030120K

Category:
-
Manufacturer:
-
Description:
DIODE MOSFETS SILICON CARBIDES 1
Package:
Packaging:
Tube
RoHS：
YES
Price:
$12.51

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Power Dissipation (Max)
130W (Tc)
Current - Continuous Drain (Id) @ 25°C
74A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Package / Case
TO-247-4
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Supplier Device Package
TO-247-4
Vgs (Max)
+18V, -4V
Vgs(th) (Max) @ Id
4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2844 pF @ 1000 V
Rds On (Max) @ Id, Vgs
39mOhm @ 40A, 18V