SI4890DY-T1-E3
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SI4890DY-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 30V 11A 8-SOIC
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
2.5W (Ta)
Drain to Source Voltage (Vdss)
30 V
Vgs (Max)
±25V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Rds On (Max) @ Id, Vgs
12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA (Min)