SIHD6N65ET1-GE3
  • image of SIHD6N65ET1-GE3

SIHD6N65ET1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 7A TO252AA
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES
Price:
$0.77

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-252AA
Power Dissipation (Max)
78W (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds
820 pF @ 100 V