SIHF640S-GE3
SIHF640S-GE3
  • image of SIHF640S-GE3
  • image of SIHF640S-GE3

SIHF640S-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 200V 18A D2PAK
Package:
Packaging:
Tube
RoHS：
YES
Price:
$2.66

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
200 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Power Dissipation (Max)
3.1W (Ta), 130W (Tc)