SISA40DN-T1-GE3
  • image of SISA40DN-T1-GE3

SISA40DN-T1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 20V 43.7A/162A PPAK
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.01

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Vgs (Max)
+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds
3415 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C
43.7A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs
1.1mOhm @ 10A, 10V